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PHB110NQ08T |
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| Part Number | PHB110NQ08T |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors General industrial applications Motors, lamps and solenoids Uninterruptible power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 230 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter
Dynamic characteristics QGD VGS = 10 V; ID = 25 A; VDS = 60 V; ... |
| Document |
 PHB110NQ08T Data Sheet
PDF 174.20KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHB110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 2 | PHB110NQ08T |
nexperia |
N-Channel MOSFET |
|
| 3 | PHB110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 4 | PHB112N06T |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 5 | PHB119NQ06T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|