Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB100N03LT in SOT404 (D2-PAK). 2. Features s s s s s TrenchMOS™ technology Low on-state resistance Avalanche ruggedness rated Logic level compatible Surface mount package. 3. Applications c c s DC to DC converters s Synchronous recti.
s s s s s TrenchMOS™ technology Low on-state resistance Avalanche ruggedness rated Logic level compatible Surface mount package. 3. Applications c c s DC to DC converters s Synchronous rectification. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol d drain (d) source (s) connected to drain (d) [1] g 2 1 3 MBK116 MBB076 s SOT404 (D2-PAK) [1] 1. It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PH.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHB101NQ03LT |
NXP |
TrenchMOS logic level FET |
|
| 2 | PHB101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 3 | PHB108NQ03LT |
NXP |
TrenchMOS logic level FET |
|
| 4 | PHB10N40 |
NXP |
PowerMOS transistor |
|
| 5 | PHB110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 6 | PHB110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 7 | PHB110NQ08T |
nexperia |
N-Channel MOSFET |
|
| 8 | PHB110NQ08T |
NXP Semiconductors |
N-Channel MOSFET |
|
| 9 | PHB112N06T |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 10 | PHB119NQ06T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 11 | PHB11N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 12 | PHB11N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|