PHB110NQ08LT - NXP Semiconductors

PHB110NQ08LT N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 75 V s Pt.

Features

s Logic level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 75 V s Ptot ≤ 230 W s ID ≤ 75 A s RDSon ≤ 8.5 mΩ. 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline [1] Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d mb g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) .