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PHB110NQ08T |
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| Part Number | PHB110NQ08T |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors General industrial applications
Motors, lamps and solenoids Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figu... |
| Document |
 PHB110NQ08T Data Sheet
PDF 674.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHB110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 2 | PHB110NQ08T |
NXP Semiconductors |
N-Channel MOSFET |
|
| 3 | PHB110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 4 | PHB112N06T |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 5 | PHB119NQ06T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|