PHB112N06T - NXP

PHB112N06T N-channel enhancement mode field-effect transistor

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features s Fast switching s Very low on-state resistance. 3. Applications s General purpose switching s Switched mode power supplies. c 4. Pinning information c T.

Features

s Fast switching s Very low on-state resistance. 3. Applications s General purpose switching s Switched mode power supplies. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 1 MBK106 Simplified outline mb mb Symbol [1] d g 2 3 MBK116 MBB076 s 1 2 3 SOT78 (TO-220AB) [1] 1. SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHP112N06T; .