N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose s.
r derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 10.7 6.7 43 147 1.176 ± 30 520 10 150 UNIT A A A W W/K V mJ A ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHB100N03LT |
NXP |
N-channel enhancement mode field-effect transistor | |
2 | PHB101NQ03LT |
NXP |
TrenchMOS logic level FET | |
3 | PHB101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
4 | PHB108NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHB110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
6 | PHB110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
7 | PHB110NQ08T |
nexperia |
N-Channel MOSFET | |
8 | PHB110NQ08T |
NXP Semiconductors |
N-Channel MOSFET | |
9 | PHB112N06T |
NXP |
N-channel enhancement mode field-effect transistor | |
10 | PHB119NQ06T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
11 | PHB11N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
12 | PHB11N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |