PHB11N03LT - NXP

PHB11N03LT N-channel TrenchMOS transistor Logic level FET

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHB11N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N03LT is supplied in the SOT428 (DPAK) surface mounting package. PINNING PIN 1 2 3 ta.

Features

• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Logic level compatible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHB11N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N03LT is supplied in the SOT428 (DPAK) surface mounting package. PINNIN.