N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB101NQ03LT in SOT404 (D2-PAK) PHD101NQ03LT in SOT428 (D-PAK). 2. Features s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC convertors 4. Pinning information Table 1: Pinning - SOT.
s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC convertors 4. Pinning information Table 1: Pinning - SOT404, SOT428 simplified outline and symbol Simplified outline mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 2 1 3 MBK116 1 Top view 3 MBK091 SOT404 (D2-PAK) [1] SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. Philips Semiconductors PHB/PHD101NQ03LT TrenchMOS™ logic level FET 5. Quick reference data .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHB101NQ04T |
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2 | PHB100N03LT |
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N-channel enhancement mode field-effect transistor | |
3 | PHB108NQ03LT |
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TrenchMOS logic level FET | |
4 | PHB10N40 |
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PowerMOS transistor | |
5 | PHB110NQ06LT |
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N-channel TrenchMOS logic level FET | |
6 | PHB110NQ08LT |
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N-channel TrenchMOS logic level FET | |
7 | PHB110NQ08T |
nexperia |
N-Channel MOSFET | |
8 | PHB110NQ08T |
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N-Channel MOSFET | |
9 | PHB112N06T |
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N-channel enhancement mode field-effect transistor | |
10 | PHB119NQ06T |
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N-channel TrenchMOS standard level FET | |
11 | PHB11N03LT |
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N-channel TrenchMOS transistor Logic level FET | |
12 | PHB11N06LT |
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N-channel TrenchMOS transistor Logic level FET |