MTB010N06I3 - CYStech Electronics

MTB010N06I3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB010N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=30A 9.8 mΩ(typ) RDS(ON)@VGS=4.5V, ID=15A 12.8 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching .

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package Symbol MTB010N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB010N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB010N06I3 CYStek Produ.