MTB010N06RH8 - CYStech

MTB010N06RH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C016H8 Issued Date : 2019.04.08 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB010N06RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A  Simple Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead platin.

Features

VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A
 Simple Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Pb-free lead plating and Halogen-free package 60V 38A 10A 10mΩ 15.6mΩ Symbol MTB010N06RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB010N06RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape.