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CYStech Electronics Corp. Spec. No. : C450J3 Issued Date : 2016.11.11 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB012N04J3 BVDSS 40V ID@VGS=10V, TC=25°C 40A RDS(ON)@VGS=10V, ID=20A 9.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 13.4 mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Character.
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB012N04J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
MTB012N04J3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N04J3
CYStek Produc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB012N04Q8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | MTB012N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | MTB010N06RI3 |
CYStech |
N-Channel MOSFET |
|
| 8 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET |
|
| 9 | MTB011 |
Shindengen Electric |
High Output Interface Driver ICs |
|
| 10 | MTB011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 11 | MTB013N10RE3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |
|
| 12 | MTB013N10RH8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |
|