MTB013N10RH8 - CYStech Electronics

MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N10RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche.

Features

RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB013N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products P.