MTB010N06RJ3 - CYStech

MTB010N06RJ3 N-Channel MOSFET

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB010N06RJ3 Spec. No. : C016J3 Issued Date : 2018.04.11 Revised Date : 2018.04.12 Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=.

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 43A 10.3 mΩ(typ) 15.8 mΩ(typ) Symbol MTB010N06RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB010N06RJ3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, .