CYStech Electronics Corp. Spec. No. : C450Q8 Issued Date : 2017.01.09 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB012N04Q8 Features BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=8A RDS(ON)@VGS=4.5V, ID=6A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free &.
BVDSS ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=8A
RDS(ON)@VGS=4.5V, ID=6A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
40V 11A 8.7 mΩ(typ) 12.4mΩ(typ)
Symbol
MTB012N04Q8
Outline
DD
SOP-8 DD
G:Gate D:Drain S:Source
Pin 1
G SSS
Ordering Information
Device
Package
Shipping
MTB012N04Q8-0-T3-G
SOP-8 (RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB012N04J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB012N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
4 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
5 | MTB010N06I3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTB010N06RI3 |
CYStech |
N-Channel MOSFET | |
8 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET | |
9 | MTB011 |
Shindengen Electric |
High Output Interface Driver ICs | |
10 | MTB011N10RQ8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTB013N10RE3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTB013N10RH8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |