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MTB010N06I3 |
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| Part Number | MTB010N06I3 |
| Manufacturer | CYStech Electronics |
| Description | CYStech Electronics Corp. Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB010N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)... |
| Features |
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol MTB010N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB010N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB010N06I3 CYStek Produ... |
| Document |
 MTB010N06I3 Data Sheet
PDF 303.28KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTB010N06RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |
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| 2 | MTB010N06RI3 |
CYStech |
N-Channel MOSFET |
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| 3 | MTB010N06RJ3 |
CYStech |
N-Channel MOSFET |
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| 4 | MTB010A03H8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
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| 5 | MTB010A06RH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET |
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