LET9060S - STMicroelectronics

LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

The LET9060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in th.

Features

en specially optmized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE LET9060S PowerSO-10RF (straight lead) BRANDING LET9060S PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 170 165 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Juncti.