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LET9060S |
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| Part Number | LET9060S |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The LET9060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26... |
| Features |
en specially optmized for RF needs and offers excellent RF performances and ease of assembly.
ORDER CODE LET9060S PowerSO-10RF (straight lead) BRANDING LET9060S
PIN CONNECTION
SOURCE
GATE
DRAIN
Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 170 165 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Juncti... |
| Document |
 LET9060S Data Sheet
PDF 296.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LET9060C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
|
| 2 | LET9002 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 3 | LET9006 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 4 | LET9045 |
ST Microelectronics |
RF power transistor |
|
| 5 | LET9045C |
ST Microelectronics |
RF power transistor |
|