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The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatios. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the.
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Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatios. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LET9045C |
ST Microelectronics |
RF power transistor |
|
| 2 | LET9045S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 3 | LET9002 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 4 | LET9006 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 5 | LET9060C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
|
| 6 | LET9060S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 7 | LET9085 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
|
| 8 | LET9120 |
ST Microelectronics |
RF power transistor |
|
| 9 | LET9120M |
ST Microelectronics |
RF power transistor |
|
| 10 | LET9130 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
|
| 11 | LET9150 |
ST Microelectronics |
RF power transistor |
|
| 12 | LET16045C |
STMicroelectronics |
RF power transistor |
|