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The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. 1. Drain.
• Excellent thermal stability
• Common source configuration
• POUT (@28 V) = 45 W with 16 dB gain @ 1600
MHz
• BeO free package
• In compliance with the 2002/95/EC European
directive
Description
The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications.
1. Drain 2. Gate
2 3. Source
Order code LET16045C
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LET19060C |
STMicroelectronics |
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| 2 | LET20015 |
STMicroelectronics |
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| 3 | LET20030C |
STMicroelectronics |
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| 4 | LET20030S |
STMicroelectronics |
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| 5 | LET21004 |
STMicroelectronics |
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| 6 | LET21008 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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| 7 | LET21030C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
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| 8 | LET8180 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
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| 9 | LET9002 |
STMicroelectronics |
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| 10 | LET9006 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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| 11 | LET9045 |
ST Microelectronics |
RF power transistor |
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| 12 | LET9045C |
ST Microelectronics |
RF power transistor |
|