The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applicatio.
70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 15 217 200 -65 to +200 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.6 °C/W February, 6 2003 1/6 LET9130 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V ID = 10 µA VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 3 A ID = 9 A VDD = 28 V VDS = 26 V f = 1 MHz f = 1 MHz 3 0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LET9120 |
ST Microelectronics |
RF power transistor | |
2 | LET9120M |
ST Microelectronics |
RF power transistor | |
3 | LET9150 |
ST Microelectronics |
RF power transistor | |
4 | LET9002 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
5 | LET9006 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
6 | LET9045 |
ST Microelectronics |
RF power transistor | |
7 | LET9045C |
ST Microelectronics |
RF power transistor | |
8 | LET9045S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
9 | LET9060C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology | |
10 | LET9060S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
11 | LET9085 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology | |
12 | LET16045C |
STMicroelectronics |
RF power transistor |