The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linea.
■ Excellent thermal stability
■ Common source configuration
■ POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz
■ POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz
■ BeO free package
■ In compliance with the 2002/95/EC European directive
Description
The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LET9045 |
ST Microelectronics |
RF power transistor | |
2 | LET9045S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
3 | LET9002 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
4 | LET9006 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
5 | LET9060C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology | |
6 | LET9060S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
7 | LET9085 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology | |
8 | LET9120 |
ST Microelectronics |
RF power transistor | |
9 | LET9120M |
ST Microelectronics |
RF power transistor | |
10 | LET9130 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology | |
11 | LET9150 |
ST Microelectronics |
RF power transistor | |
12 | LET16045C |
STMicroelectronics |
RF power transistor |