LET9085 - STMicroelectronics

LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology

The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applicatio.

Features

ion Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 12 186 200 -65 to +150 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W January, 28 2003 1/4 LET9085 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS
* COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 10 µA VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 2 A ID = 6 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1.