LET9150 - ST Microelectronics

LET9150 RF power transistor

The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9150 Package M246 December 2010 Doc ID 16369 R.

Features

■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 150 W with 20 dB gain @ 860 MHz
■ BeO-free package Description The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code LET9150 Package M246 December 2010 Doc ID 16369 Rev 6 Branding LET9150 1/12 www.st.com 12 Contents Contents LET9150 1 Electrical data . . . ..