LET9002 - STMicroelectronics

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability o.

Features

DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 20 °C/W April, 15 2003 1/4 LET9002 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1.