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LET9045 |
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| Part Number | LET9045 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatios. It operates at 28 V ... |
| Features |
■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatios. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the... |
| Document |
 LET9045 Data Sheet
PDF 251.53KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LET9045C |
ST Microelectronics |
RF power transistor |
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| 2 | LET9045S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 3 | LET9002 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 4 | LET9006 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 5 | LET9060C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
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