IXTN58N50 - IXYS

IXTN58N50 (IXTN58N50 / IXTN61N50) Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RG.

Features

•
•
•
•
• International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (<100 pF) - reduced RFI
• Low package inductance (< 10 nH) - easy to drive and to protect
• Aluminium Nitride Isolation - increased current ratings Applications
•
•
•
•
• DC choppers AC motor speed controls DC servo and robot drives Uninterruptible power supplies (UPS) Switched mode and resonant mode power supplies V V G S miniBLOC, SOT-227 B E153432 V V A A A A W S D G = Gate S = Source D = Drain Either Source terminal at.