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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTN200N10T VDSS = 100V ID25 RDS(on) = ≤ 200A 5.5mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead curren.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTN200N10L2 |
IXYS |
Power MOSFET |
|
| 2 | IXTN21N100 |
IXYS Corporation |
High Voltage MegaMOSTMFETs |
|
| 3 | IXTN22N100L |
IXYS |
Power MOSFET |
|
| 4 | IXTN102N65X2 |
IXYS |
Power MOSFET |
|
| 5 | IXTN120N25 |
IXYS |
Power MOSFET |
|
| 6 | IXTN15N100 |
IXYS |
N-Channel Enhancement Mode |
|
| 7 | IXTN170P10P |
IXYS |
Power MOSFET |
|
| 8 | IXTN30N100L |
IXYS |
Power MOSFET |
|
| 9 | IXTN32P60P |
IXYS |
Power MOSFET |
|
| 10 | IXTN36N50 |
IXYS |
N-Channel Enhancement Mode |
|
| 11 | IXTN400N15X4 |
IXYS |
Power MOSFET |
|
| 12 | IXTN58N50 |
IXYS |
(IXTN58N50 / IXTN61N50) Power MOSFET |
|