IXTN30N100L - IXYS

IXTN30N100L Power MOSFET

Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.45 Ω Symbol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Maximum Ratings IXTB IXTN PLUS2.

Features

• Designed for linear operation
• International standard packages
• Molding epoxies meet UL 94 V-0 flammability classification
• SOT-227B miniBLOC with aluminium nitride isolation Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 μA V = ± 30 V , V = 0 GS DC DS VDS = VDSS, VGS = 0 V TJ = 25°C TJ = 125°C VGS = 20 V, ID = 0.5
• ID25, Note 1 1000 3 V 5V ± 200 nA 50 μA 1 mA 0.45 Ω Applications
• Programmable loads
• Current regulators
• DC-DC converters
• Battery char.