Advance Technical Information X2-Class Power MOSFET IXTN102N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC.
International Standard Package
miniBLOC with Aluminum Nitride
Isolation
LAovwalaQnGche
Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 51A, Note 1
Characteristic Values Min. Typ. Max. 650 V
3.0 5.0 V
100 nA
25 A 350 A
30 m
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Con.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTN120N25 |
IXYS |
Power MOSFET | |
2 | IXTN15N100 |
IXYS |
N-Channel Enhancement Mode | |
3 | IXTN170P10P |
IXYS |
Power MOSFET | |
4 | IXTN200N10L2 |
IXYS |
Power MOSFET | |
5 | IXTN200N10T |
IXYS |
Power MOSFET | |
6 | IXTN21N100 |
IXYS Corporation |
High Voltage MegaMOSTMFETs | |
7 | IXTN22N100L |
IXYS |
Power MOSFET | |
8 | IXTN30N100L |
IXYS |
Power MOSFET | |
9 | IXTN32P60P |
IXYS |
Power MOSFET | |
10 | IXTN36N50 |
IXYS |
N-Channel Enhancement Mode | |
11 | IXTN400N15X4 |
IXYS |
Power MOSFET | |
12 | IXTN58N50 |
IXYS |
(IXTN58N50 / IXTN61N50) Power MOSFET |