Advance Technical Information X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated IXTN400N15X4 D G S S VDSS = ID25 = RDS(on) 150V 400A 2.7m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Conti.
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500 V~
High Current Handling Capability
Low QG Avalanche
Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
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DS100910A(6/18)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 60A, Note 1
RGi Gate Input Re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTN102N65X2 |
IXYS |
Power MOSFET | |
2 | IXTN120N25 |
IXYS |
Power MOSFET | |
3 | IXTN15N100 |
IXYS |
N-Channel Enhancement Mode | |
4 | IXTN170P10P |
IXYS |
Power MOSFET | |
5 | IXTN200N10L2 |
IXYS |
Power MOSFET | |
6 | IXTN200N10T |
IXYS |
Power MOSFET | |
7 | IXTN21N100 |
IXYS Corporation |
High Voltage MegaMOSTMFETs | |
8 | IXTN22N100L |
IXYS |
Power MOSFET | |
9 | IXTN30N100L |
IXYS |
Power MOSFET | |
10 | IXTN32P60P |
IXYS |
Power MOSFET | |
11 | IXTN36N50 |
IXYS |
N-Channel Enhancement Mode | |
12 | IXTN58N50 |
IXYS |
(IXTN58N50 / IXTN61N50) Power MOSFET |