IXTN170P10P - IXYS

IXTN170P10P Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G SS Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 2.

Features

z International Standard Package z miniBLOC, with Aluminium Nitride Isolation z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2013 IXYS CORPORATION, All Rights Reserved DS99975B(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, .