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IXTN58N50 |
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| Part Number | IXTN58N50 |
| Manufacturer | IXYS |
| Description | High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM ... |
| Features |
• • • • • International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (<100 pF) - reduced RFI • Low package inductance (< 10 nH) - easy to drive and to protect • Aluminium Nitride Isolation - increased current ratings Applications • • • • • DC choppers AC motor speed controls DC servo and robot drives Uninterruptible power supplies (UPS) Switched mode and resonant mode power supplies V V G S miniBLOC, SOT-227 B E153432 V V A A A A W S D G = Gate S = Source D = Drain Either Source terminal at... |
| Document |
 IXTN58N50 Data Sheet
PDF 59.40KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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| 5 | IXTN200N10L2 |
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