IXTN21N100 - IXYS Corporation

IXTN21N100 High Voltage MegaMOSTMFETs

High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R.

Features

l l l l l l International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±200 TJ = 25°C TJ = 125°C 500 2 0.55 V V nA µA mA Ω l l l l VDSS VGH(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 6 mA VDS = VGS, ID = 500 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V l l DC-DC converters .