IXTN32P60P - IXYS

IXTN32P60P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN32P60P VDSS ID25 = = ≤RDS(on) - 600V - 32A 350mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pul.

Features

z International standard package z Rugged PolarPTM process z Avalanche Rated z Low package inductance Applications z Hight side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment © 2008 IXYS CORPORATION, All rights reserved DS99991(05/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = -10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5
• VDSS, ID = 0.5
• ID25 RG = 1Ω (External) Qg(on) Qgs Qgd VGS = -10V, VDS = 0.5
• VDSS, ID = 0.5
• ID25 Rt.