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IXTN32P60P |
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| Part Number | IXTN32P60P |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN32P60P VDSS ID25 = = ≤RDS(on) - 600V - 32A 350mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR E... |
| Features |
z International standard package z Rugged PolarPTM process z Avalanche Rated z Low package inductance
Applications
z Hight side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment
© 2008 IXYS CORPORATION, All rights reserved
DS99991(05/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs Qgd VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Rt... |
| Document |
 IXTN32P60P Data Sheet
PDF 111.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTN30N100L |
IXYS |
Power MOSFET |
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| 2 | IXTN36N50 |
IXYS |
N-Channel Enhancement Mode |
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| 3 | IXTN102N65X2 |
IXYS |
Power MOSFET |
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| 4 | IXTN120N25 |
IXYS |
Power MOSFET |
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| 5 | IXTN15N100 |
IXYS |
N-Channel Enhancement Mode |
|