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IXTN170P10P |
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| Part Number | IXTN170P10P |
| Manufacturer | IXYS |
| Description | PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G SS Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°... |
| Features |
z International Standard Package z miniBLOC, with Aluminium Nitride
Isolation z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators
© 2013 IXYS CORPORATION, All Rights Reserved
DS99975B(01/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, ... |
| Document |
 IXTN170P10P Data Sheet
PDF 117.36KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IXTN102N65X2 |
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| 4 | IXTN200N10L2 |
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| 5 | IXTN200N10T |
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