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IXTN102N65X2 |
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| Part Number | IXTN102N65X2 |
| Manufacturer | IXYS |
| Description | Advance Technical Information X2-Class Power MOSFET IXTN102N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VIS... |
| Features |
International Standard Package miniBLOC with Aluminum Nitride Isolation LAovwalaQnGche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 51A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 25 A 350 A 30 m High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Con... |
| Document |
 IXTN102N65X2 Data Sheet
PDF 130.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTN120N25 |
IXYS |
Power MOSFET |
|
| 2 | IXTN15N100 |
IXYS |
N-Channel Enhancement Mode |
|
| 3 | IXTN170P10P |
IXYS |
Power MOSFET |
|
| 4 | IXTN200N10L2 |
IXYS |
Power MOSFET |
|
| 5 | IXTN200N10T |
IXYS |
Power MOSFET |
|