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Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 2.
• High frequency IGBT
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99392(12/05)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C
unless Min.
otherwise specified) Typ. Max.
gfs
Cies Coes Cres
Qg Qge Qgc
td(on) tri td(off) tfi Eoff
td(on) tri Eon.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXGT32N90B2 |
IXYS |
HiPerFAST IGBT B2-Class High Speed IGBTs |
|
| 2 | IXGT32N170 |
IXYS |
High Voltage IGBT |
|
| 3 | IXGT32N170A |
IXYS |
High Voltage IGBT |
|
| 4 | IXGT32N60BD1 |
IXYS Corporation |
HiPerFAST IGBTwith Diode |
|
| 5 | IXGT32N60C |
IXYS Corporation |
(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series |
|
| 6 | IXGT30N120B3D1 |
IXYS Corporation |
GenX3 1200V IGBTs |
|
| 7 | IXGT30N60B |
IXYS Corporation |
HiPerFASTTM IGBT |
|
| 8 | IXGT30N60B2 |
IXYS Corporation |
HiPerFAST IGBT |
|
| 9 | IXGT30N60B2D1 |
IXYS |
IGBT |
|
| 10 | IXGT30N60BD1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode |
|
| 11 | IXGT30N60BU1 |
IXYS Corporation |
HiPerFAST IGBT |
|
| 12 | IXGT30N60C2 |
IXYS |
HiPerFAST IGBT |
|