HiPerFASTTM IGBT IXGH30N60B IXGT30N60B VCES IC25 VCE(sat) tfi = 600 V = 60 A = 1.8 V = 100 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 60.
• International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on - drive simplicity Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies Advantages
• Space savings (two devices in one package)
• High power density
• Suitable for surface mounting
• Switching speed for high frequency applications
• Easy to mount with 1 screw,TO-247 (isolated mounting screw hole)
97516D (7/00.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGT30N60B2 |
IXYS Corporation |
HiPerFAST IGBT | |
2 | IXGT30N60B2D1 |
IXYS |
IGBT | |
3 | IXGT30N60BD1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode | |
4 | IXGT30N60BU1 |
IXYS Corporation |
HiPerFAST IGBT | |
5 | IXGT30N60C2 |
IXYS |
HiPerFAST IGBT | |
6 | IXGT30N60C2D1 |
IXYS |
HiPerFAST IGBT | |
7 | IXGT30N120B3D1 |
IXYS Corporation |
GenX3 1200V IGBTs | |
8 | IXGT31N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT | |
9 | IXGT32N170 |
IXYS |
High Voltage IGBT | |
10 | IXGT32N170A |
IXYS |
High Voltage IGBT | |
11 | IXGT32N60BD1 |
IXYS Corporation |
HiPerFAST IGBTwith Diode | |
12 | IXGT32N60C |
IXYS Corporation |
(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series |