IXGT30N60B2D1 - IXYS

IXGT30N60B2D1 IGBT

Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 TC = 25°C (limited by lead.

Features

z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers © 2004 IXYS All rights reserved DS99134A(04/04) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 24 A; VCE = 10 V, Pulse test, t ≤ 300 µs, d.