Advance Technical Information IXGH 32N90B2 HiPerFAST IGBT B2-Class High Speed IGBTs IXGT 32N90B2 TM VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 900 V = 64 A = 2.7 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited.
z z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Weight Mounting torque (TO-247) TO-247 TO-268 1.13/10Nm/lb.in. 6 4 g g High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 750 ±100 TJ = 125°C 2.2 2.1 2.7 V μA μA nA V V z z z z VGE(th) ICES IGES VCE(sat) IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC110, VGE = 15 V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGT32N90B2D1 |
IXYS |
IGBT | |
2 | IXGT32N170 |
IXYS |
High Voltage IGBT | |
3 | IXGT32N170A |
IXYS |
High Voltage IGBT | |
4 | IXGT32N60BD1 |
IXYS Corporation |
HiPerFAST IGBTwith Diode | |
5 | IXGT32N60C |
IXYS Corporation |
(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series | |
6 | IXGT30N120B3D1 |
IXYS Corporation |
GenX3 1200V IGBTs | |
7 | IXGT30N60B |
IXYS Corporation |
HiPerFASTTM IGBT | |
8 | IXGT30N60B2 |
IXYS Corporation |
HiPerFAST IGBT | |
9 | IXGT30N60B2D1 |
IXYS |
IGBT | |
10 | IXGT30N60BD1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode | |
11 | IXGT30N60BU1 |
IXYS Corporation |
HiPerFAST IGBT | |
12 | IXGT30N60C2 |
IXYS |
HiPerFAST IGBT |