IXGT30N60B2 - IXYS Corporation

IXGT30N60B2 HiPerFAST IGBT

www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2 IXGT 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 .

Features

z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V z z z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 24 A, .