IXGT32N60C - IXYS Corporation

IXGT32N60C (IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series

www.DataSheet4U.com HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 60 A = 2.1 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = .

Features

• International standard packages JEDEC TO-247 and surface mountable TO-268
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5 200 1 ±100 2.1 2.5 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VCE = VGE.