HiPerFASTTM IGBT with Diode Combi Pack IXGH 30N60BU1 IXGT 30N60BU1 VCES IC25 VCE(sat) tfi TO-268 (IXGT) = 600 V = 60 A = 1.8 V = 100 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE .
International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Optimized VCE(sat) and switching speeds for medium frequency applications 97501E (02/02) Maximu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGT30N60B |
IXYS Corporation |
HiPerFASTTM IGBT | |
2 | IXGT30N60B2 |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGT30N60B2D1 |
IXYS |
IGBT | |
4 | IXGT30N60BD1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode | |
5 | IXGT30N60C2 |
IXYS |
HiPerFAST IGBT | |
6 | IXGT30N60C2D1 |
IXYS |
HiPerFAST IGBT | |
7 | IXGT30N120B3D1 |
IXYS Corporation |
GenX3 1200V IGBTs | |
8 | IXGT31N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT | |
9 | IXGT32N170 |
IXYS |
High Voltage IGBT | |
10 | IXGT32N170A |
IXYS |
High Voltage IGBT | |
11 | IXGT32N60BD1 |
IXYS Corporation |
HiPerFAST IGBTwith Diode | |
12 | IXGT32N60C |
IXYS Corporation |
(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series |