GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C T.
z Optimized for low conduction and switching losses
z Square RBSOA z Anti-parallel ultra fast diode z International standard packages
Advantages
z High power density z Low gate drive requirement
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines
© 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg Qge IC = 30A, VGE = 15V, VCE = 0.5
• VCES Qgc
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGT30N60B |
IXYS Corporation |
HiPerFASTTM IGBT | |
2 | IXGT30N60B2 |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGT30N60B2D1 |
IXYS |
IGBT | |
4 | IXGT30N60BD1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode | |
5 | IXGT30N60BU1 |
IXYS Corporation |
HiPerFAST IGBT | |
6 | IXGT30N60C2 |
IXYS |
HiPerFAST IGBT | |
7 | IXGT30N60C2D1 |
IXYS |
HiPerFAST IGBT | |
8 | IXGT31N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT | |
9 | IXGT32N170 |
IXYS |
High Voltage IGBT | |
10 | IXGT32N170A |
IXYS |
High Voltage IGBT | |
11 | IXGT32N60BD1 |
IXYS Corporation |
HiPerFAST IGBTwith Diode | |
12 | IXGT32N60C |
IXYS Corporation |
(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series |