IXGT32N60BD1 - IXYS Corporation

IXGT32N60BD1 HiPerFAST IGBTwith Diode

HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped ind.

Features

• International standard packages
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• Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 High frequency IGBT and antiparallel FRED in one package High current handling capability HiPerFASTTM HDMOSTM process MOS Gate turn-on -drive simplicity Applications
• Uninterruptible power supplies (UPS)
• Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.0 V V
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• Switched-mode and resonant-mode power suppl.