IRFB33N15DPbF - International Rectifier

IRFB33N15DPbF Power MOSFET

SMPS MOSFET PD- 95537 IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 150V RDS(on) max 0.056Ω ID 33A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l F.

Features

(1.1N
•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through ‡ are on page 11 www.irf.com 1 7/21/04 IRFB/IRFS/IRFSL33N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 150
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