IRFB33N15D - International Rectifier

IRFB33N15D Power MOSFET

PD- 93903 SMPS MOSFET IRFB33N15D IRFS33N15D IRFSL33N15D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 150V RDS(on) max 0.056Ω ID 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc.

Features

/ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through ‡ are on page 11 www.irf.com 1 6/29/00 IRFB/IRFS/IRFSL33N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 150
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  – V V GS = 0V, ID = 250µA
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  – 0.18
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  – V/°C Reference to 25°.