IRFB3307 - International Rectifier

IRFB3307 HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 .

Features

Thermally limited) Single Pulse Avalanche Energy ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak www.irf.com Max. ™130 91™ 510 250 1.6 ± 20 11 -55 to + 175 300 x x10lb in (1.1N m) 270 See Fig. 14, 15, 16a, 16b Typ.
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  – 0.50
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  – Max. 0.61
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  – 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 01/20/06 IRFB3307/IRFS3307/IRFSL3307 Static @ TJ = 25°C (unless otherwise specified) Symbo.