IRFB3307PbF - International Rectifier

IRFB3307PbF HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 95706D .

Features

rmally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RJC Parameter kJunction-to-Case RCS RJA RJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak Max. 120™l 84™l 510 l200 l1.3 ± 20 -55 to + 175 300 x x10lb in (1.1N m) 270 See Fig. 14, 15, 16a, 16b Typ.
  –
  –
  – 0.50
  –
  –
  –
  –
  –
  – Max. l0.61
  –
  –
  – 62 40 Units A W W/°C V °C mJ A mJ Units °C/W www.irf.com 1 01/20/12 IRFB/S/SL3307PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter M.